November 26th will be an eventful day at the Aachen Graphene & 2D Materials Center, featuring two IEEE Distinguished Lectures and the kickoff meeting of the ULTIMOS2 project.
The lectures will be given by Prof. Tibor Grasser and Dr. Frank Schwierz within the framework of the IEEE Distinguished Lecturer Program of the Electron Devices Society (EDS). The purpose of this program is to select a list of quality lectures that contribute to the dissemination activities of the EDS, giving talks on topics that are central for the development of modern electronic devices.
Prof. Grasser is the head of the Institute for Microelectronic at TU Wien, and an expert in the characterization and modelling of electronic devices, including those based on 2D materials. One recent achievement from his group is demonstration that calcium fluoride (CaF2) can serve as ultrathin gate insulator for 2D devices, a result that has been recently published on Nature Electronics and that will also be the topic of his lecture in Aachen.
Dr. Schwierz is Privatdozent and Head of the RF & Nano Device Research Group at the Technische Universitaet Ilmenau, Germany. His research is focused on novel device and material concepts for future electronics. At present, he is particularly interested in two-dimensional (2D) electronic materials. In his lecture, he will present his recent work in the field, which is a major contribution to the current understanding of the merits and drawbacks of 2D devices and 2D electronics.
The two IEEE Distinguished Lectures will take place in the Physikzentrum, room 28A301, with the following schedule
The lectures will be followed by the kick-off meeting of the project ULTIMOS2 (Ultimate Scaling and Performance Potential of MoS2 Metal Oxide Semiconductor Field Effect Transistors). ULTIMOS2 is a project funded by the DFG, which builds on the complementary expertizes of Prof. Grasser, Dr. Schwierz and Prof. Max Lemme (AMO GmbH & RWTH Aachen University) in the fabrication, characterization and modelling of 2D electronic devices. The scope of the project is to give a sound assessment of the actual potential and limitations of MoS2 field effect transistors, by gaining a deep understanding of their physics, their scaling behavior and their process integration.