{"id":836,"date":"2020-02-19T09:26:48","date_gmt":"2020-02-19T08:26:48","guid":{"rendered":"http:\/\/www.graphene.ac\/?p=836"},"modified":"2020-02-25T11:16:43","modified_gmt":"2020-02-25T10:16:43","slug":"an-efficient-emitter-for-graphene-base-hot-electron-transistors","status":"publish","type":"post","link":"https:\/\/www.graphene.ac\/index.php\/2020\/02\/19\/an-efficient-emitter-for-graphene-base-hot-electron-transistors\/","title":{"rendered":"An efficient emitter for graphene-base hot electron transistors"},"content":{"rendered":"\n

Researchers from RWTH Aachen University, AMO GmbH, Stanford University and IHP have demonstrated that heterostructures formed by silicon, molybdenum disulfide (MoS2) and graphene are potential candidates as emitter-diodes of graphene-base hot-electron transistors. <\/p>\n\n\n\n\n\n\n\n

\"\"\/
Left: Schematic of the devices. The red vertical arrow indicates the electron transport direction. A thin layer of MoS2 functions as injection barrier. Right: I<\/em>\u2013V<\/em> characteristics of a device, measured in vacuum at temperatures ranging from 200 to 300 K with a 20 K interval showing. The device show a temperature-dependent current with low turn-on voltage. <\/figcaption><\/figure>\n\n\n\n

The concept of hot electron transistors\n(HETs) was developed already in 1961 by C. Mead at Caltech. HETs are three\nterminal devices comprised of two back-to-back connected diodes formed by an\nemitter (n+-Si), a base (typically a metal) and a collector (metal), separated\nby thin barrier-layers. The first diode is the emitter that injects hot\nelectrons, while the second one is called the filtering diode, as it enables\nonly high-energy electrons to reach the collector. <\/p>\n\n\n\n

A main limitation to the performance of HETs\nis the long electron transit-time in the metallic base. This problem can be\ncircumvented exploiting the unique conduction properties graphene and replacing\nthe metallic base with this material. Simulations show however that high\non-state collector currents can be achieved only if the conduction-band offset\nbetween the emitter and the\ninjection barrier is small enough for thermionic\nemission of electrons. <\/p>\n\n\n\n

This is where the work of Belete and\ncolleagues becomes interesting from the application point of view. In fact, the\nobserved low barrier between Si and MoS2<\/sub> and the resulting\nthermionic emission of hot electrons across Si\/MoS2<\/sub>\/Graphene\nvertical heterostructures satisfy the conditions for high on-state currents,\nand make their devices potential candidates as emitter diodes of graphene-base\nHETs for future high-speed electronics.<\/p>\n\n\n\n

This work has been published on ACS Applied Materials & Interfaces <\/em>and it is accessible via the following link https:\/\/pubs.acs.org\/articlesonrequest\/AOR-zm63xFhfBR5K2a8Dzj8x<\/a>. In the next 12 months, the first 50 e-prints will be free of charge for the reader. <\/p>\n\n\n\n

The research work was funded by the European Commission (Graphene Flagship, 785219, QUEFORMAL, 829035) the German Ministry of Education and Research, BMBF (GIMMIK,03XP0210, NeuroTec, 16ES1134), and the German Research Foundation, DFG (MOSTFLEX, 407080863).<\/p>\n\n\n\n

Bibliographic information:
Electron Transport across Vertical Silicon\/MoS2<\/sub>\/Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene Base Hot Electron Transistors<\/strong>
M. Belete, O. Engstr\u00f6m, S. Vaziri, G. Lippert, M. Lukosius, S. Kataria and M. C. Lemme
ACS Appl. Mater. Interfaces (2020)<\/em>
https:\/\/pubs.acs.org\/doi\/full\/10.1021\/acsami.9b21691<\/a>
<\/p>\n\n\n\n

<\/p>\n","protected":false},"excerpt":{"rendered":"

Researchers from RWTH Aachen University, AMO GmbH, Stanford University and IHP have demonstrated that heterostructures formed by silicon, molybdenum disulfide (MoS2) and graphene are potential candidates as emitter-diodes of graphene-base hot-electron transistors.<\/p>\n","protected":false},"author":6,"featured_media":0,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[16],"tags":[],"class_list":["post-836","post","type-post","status-publish","format-standard","hentry","category-new-publication"],"_links":{"self":[{"href":"https:\/\/www.graphene.ac\/index.php\/wp-json\/wp\/v2\/posts\/836","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.graphene.ac\/index.php\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.graphene.ac\/index.php\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.graphene.ac\/index.php\/wp-json\/wp\/v2\/users\/6"}],"replies":[{"embeddable":true,"href":"https:\/\/www.graphene.ac\/index.php\/wp-json\/wp\/v2\/comments?post=836"}],"version-history":[{"count":3,"href":"https:\/\/www.graphene.ac\/index.php\/wp-json\/wp\/v2\/posts\/836\/revisions"}],"predecessor-version":[{"id":847,"href":"https:\/\/www.graphene.ac\/index.php\/wp-json\/wp\/v2\/posts\/836\/revisions\/847"}],"wp:attachment":[{"href":"https:\/\/www.graphene.ac\/index.php\/wp-json\/wp\/v2\/media?parent=836"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.graphene.ac\/index.php\/wp-json\/wp\/v2\/categories?post=836"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.graphene.ac\/index.php\/wp-json\/wp\/v2\/tags?post=836"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}