Publications

2021

Plasma-enhanced atomic layer deposition of Al2O3 on graphene using monolayer hBN as interfacial layer
B. Canto, M. Otto, M. J. Powell, V. Babenko, A. O’Mahony, H. C. M. Knoops, R. S. Sundaram, S. Hofmann, M. C. Lemme, D. Neumaier, Advanced Materials Technologies, 2100489 (1-8), 2021.

Upstream modes and antidots poison graphene quantum Hall effect
N. Moreau, B. Brun, S. Somanchi, , K. Watanabe, T. Taniguchi, C. Stampfer & B. Hackens,
Nature Communications 12, 4265 (2021).

Correlating Nanocrystalline Structure with Electronic Properties in 2D Platinum Diselenide
S. Lukas, O. Hartwig, M. Prechtl, G. Capraro, J. Bolten, A. Meledin, J. Mayer, D. Neumaier, S. Kataria, G. S. Duesberg, and M. C. Lemme, Adv. Funct. Mater., 2102929 (2021).

Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics
Z. Wang, A. Hemmetter, B. Uzlu, M. Saeed, A. Hamed, S. Kataria, R. Negra, D. Neumaier & M. C. Lemme, Adv. Electron. Mater. 2021, 2001210.

Voltage-Tunable Thin Film Graphene-diode-based Microwave Harmonic Generator
M. Saeed, A. Hamed, P. Palacios, B. Uzlu, Z. Wang, E. Baskent, and R. Negra
IEEE Microwave and Wireless Components Letters, doi: 10.1109/LMWC.2021.3061573. (2021).

Fully Integrated 2.4-GHz Flexible Rectifier Using Chemical-Vapor-Deposition Graphene MMIC Process
C-Y Fan, M. D. Wie, B. Uzlu, Z. Wang, D. Neumaier, and R. Negra, IEEE Transactions on Electron Devices, 68, 1326 (2021).

Study on the Adhesion Properties of Graphene and Hexagonal Boron Nitride Monolayers in Multilayered Micro-devices by Scratch Adhesion Test
E Ivanov, T Batakaliev, R Kotsilkova, M Otto, and D Neumaier, Journal of Materials Engineering and Performance 30, 5673 (2021).

Electrical Control over Phonon Polarization in Strained Graphene
J. Sonntag, S. Reichardt, B. Beschoten, and C. Stampfer, Nano Lett. 21, 2898  (2021).

Tunable interdot coupling in few-electron bilayer graphene double quantum dots
L. Banszerus, A. Rothstein, E. Icking, S. Möller, K. Watanabe, T. Taniguchi, C. Stampfer, and C. Volk, Appl. Phys. Lett. 118, 103101 (2021).

Dispersive sensing of charge states in a bilayer graphene quantum dot
L. Banszerus, S. Möller, E. Icking, C. Steiner, D. Neumaier, M. Otto, K. Watanabe, T. Taniguchi, C. Volk, and C. Stampfer, Appl. Phys. Lett. 118, 093104 (2021).

Pulsed-gate spectroscopy of single-electron spin states in bilayer graphene quantum dots
L. Banszerus, K. Hecker, E. Icking, S.Trellenkamp, F. Lentz, D. Neumaier, K. Watanabe, T. Taniguchi, C. Volk, and C. Stampfer, Phys. Rev. B 103, L081404 (2021).

Large-area integration of two-dimensional materials and their heterostructures by wafer bonding
A. Quellmalz, X. Wang, S. Sawallich, B. Uzlu, M. Otto, S. Wagner, Z. Wang, M. Prechtl, O. Hartwig, S. Luo, G. S. Duesberg, M. C. Lemme, K. B. Gylfason, N. Roxhed, G. Stemme, and F. Niklaus, Nature Communications 12, 917 (2021).

Moiré heterostructures as a condensed-matter quantum simulator
D. M. Kennes, M. Claassen, L. Xian, A. Georges, A. J. Millis, J. Hone, C. R. Dean, D. N. Basov, A. N. Pasupathy & A. Rubio,  Nature Physics. 17, 155–163 (2021).

Moiré metrology of energy landscapes in van der Waals heterostructures
Halbertal, N. R. Finney, S. S. Sunku, A. Kerelsky, C. Rubio-Verdú, S. Shabani, L. D. Xian, S. Carr, S. Chen, C. Zhang, L. Wang, D. Gonzalez-Acevedo, A. S. McLeod, D. Rhodes, K. Watanabe, T. Taniguchi, E. Kaxiras, C. R. Dean, J. C. Hone, A. N. Pasupathy, D. M. Kennes, A. Rubio, D. N. Basov, Nature Communications 12, 242 (2021).

Moiréless correlations in ABCA graphene
Kerelsky, C. Rubio-Verdú, L. D. Xian, D. M. Kennes, D. Halbertal, N. Finney, L. Song, S. Turkel, L. Wang, K. Watanabe, T. Taniguchi, J. Hone, C. Dean, D. Basov, A. Rubio, A. N. Pasupathy, Proceedings of the National Academy of Sciences of the United States of America 118 (4), e2017366118 (2021).

Tunable s-SNOM for Nanoscale Infrared Optical Measurement of Electronic Properties of Bilayer Graphene
K. G. Wirth, H. Linnenbank, T. Steinle, L. Banszerus, E. Icking, C. Stampfer, H. Giessen, and T. Taubner, ACS Photonics ASAP (2021)

Phosphate-assisted efficient oxygen evolution over finely dispersed cobalt particles supported on graphene
F. Zeng, J. Lia, J. P. Hofmann, T. Bisswanger, C. Stampfer, H. Hartmann, A. Besmehn, S. Palkovits, and R. Palkovits, Catal. Sci. Technol. Advance Article (2021)

2020

Dependable Contact Related Parameter Extraction in Graphene–Metal Junctions
A. Gahoi, S. Kataria, F. Driussi, S. Venica, H. Pandey, D. Esseni, L. Selmi, and M. C. Lemme, Adv. Electron. Mater. 2020, 6, 2000386 (2020).

Correlated electronic phases in twisted bilayer transition metal dichalcogenides
L. Wang, E.-M. Shih, A. Ghiotto, L. Xian, D. A. Rhodes, C. Tan, M. Claassen, D. M. Kennes, Y. Bai, B. Kim, K. Watanabe, T. Taniguchi, X. Zhu, J. Hone, A. Rubio, A. N. Pasupathy, and C. R. Dean, Nat. Mater. 19, 861–866 (2020)

Electron-hole crossover in gate-controlled bilayer graphene quantum dots
L. Banszerus, A. Rothstein, T. Fabian, S. Möller, E. Icking, S. Trellenkamp, F. Lentz, D. Neumaier, K. Watanabe, T. Taniguchi, F. Libisch, C. Volk, and C. Stampfer, Nano Lett. 10, 7709 (2020) (or: arXiv: 2008.02585 )

Electrostatic detection of Shubnikov-de-Haas oscillations in bilayer graphene by Coulomb resonances in gate-defined quantum dots
L. Banszerus, T. Fabian, S. Möller, E. Icking, H. Heiming, S. Trellenkamp, F. Lentz, D. Neumaier, M. Otto, K. Watanabe, T. Taniguchi, F. Libisch, C. Volk, and C. Stampfer, Phys. Status Solidi B 257, 2000333 (2020) (or: arXiv: 2006.13056)

Valley lifetimes of conduction band electrons in monolayer WSe2
M. Ersfeld, F. Volmer, L. Rathmann, L. Kotewitz, M. Heithoff, M. Lohmann, B. Yang, K. Watanabe, T. Taniguchi, L. Bartels, J. Shi, C. Stampfer, and B. Beschoten, Spintronics XIII 11470, 114702M (2020) (or: arXiv: 2007.14712)

Fractional quantum Hall effect in CVD-grown graphene
M. Schmitz, T. Ouaj, Z. Winter, K. Rubi, K. Watanabe, T. Taniguchi, U. Zeitler, B. Beschoten, and C. Stampfer, 2D Materials, 7, 041007 (2020).

Graphene–Quantum Dot Hybrid Photodetectors with Low Dark-Current Readout
D. De Fazio, B. Uzlu, I. Torre, C. Monasterio, S. Gupta, T. Khodkov, Y. Bi, Z. Wang, M. Otto, M. C. Lemme, S. Goossens, D. Neumaier, and F. H. L. Koppens, ACS Nano 2020, XXXX, XXX, XXX-XXX.
ArXiv: https://arxiv.org/abs/2005.10658

Dependable Contact Related Parameter Extraction in Graphene–Metal Junctions
A. Gahoi, S. Kataria, F. Driussi, S. Venica, H. Pandey, D. Esseni, L. Selmi, and M. C. Lemme, Adv. Electron. Mater. 2020, 2000386.

Analogue two-dimensional semiconductor electronics
Dmitry K. Polyushkin Stefan Wachter, Lukas Mennel, Maksym Paliy, Giuseppe Iannaccone, Gianluca Fiori, Daniel Neumaier, Barbara Canto and Thomas Mueller, Nature Electronics (2020).
ArXiv: https://arxiv.org/abs/1909.00203

Insulators for 2D nanoelectronics: the gap to bridge
Y. Y. Illarionov, T. Knobloch, M. Jech, M. Lanza, D. Akinwande, M. Vexler, T. Mueller, M. C. Lemme, G. Fiori, F. Schwierz & T. Grasser, Nat Commun 11, 3385 (2020).

Highly Responsive Flexible Photodetectors Based on MOVPE Grown Uniform Few-Layer MoS2
D. Schneider, A. Grundmann, A. Bablich, V. Passi, S. Kataria, H. Kalisch, M. Heuken, A. Vescan, D. Neumaier, and M. C. Lemme, ACS Photonics, XXXX, XXX, XXX-XXX (2020).

Capacitance–Voltage (CV ) Characterization of Graphene–Silicon Heterojunction Photodiodes
S. Riazimehr, M. Belete, S. Kataria, O. Engström, and M. C. Lemme, Adv. Optical Mater., 2000169 (2020).

Dependability Assessment of Transfer Length Method to Extract the Metal–Graphene Contact Resistance
F. Driussi , S. Venica , A. Gahoi, S. Kataria, M. C. Lemme, and P. Palestri, IEEE Trans. Semicond. Manuf. 33, 210 (2020).

Dielectric Surface Charge Engineering for Electrostatic Doping of Graphene
S. Wittmann, F. Aumer, D. Wittmann, S. Pindl, S. Wagner, A. Gahoi, E. Reato, M. Belete, S. Kataria, Satender, and M. C. Lemme, ACS Appl. Electron. Mater., XXXX, XXX, XXX-XXX (2020).

Observation of the Spin-Orbit Gap in Bilayer Graphene by One-Dimensional Ballistic Transport
L. Banszerus, B. Frohn, T. Fabian, S. Somanchi, A. Epping, M. Müller, D. Neumaier, K. Watanabe, T. Taniguchi, F. Libisch, B. Beschoten, F. Hassler, and C. Stampfer, Phys. Rev. Lett. 124, 177701 (2020).

Radially polarized light beams from spin-forbidden dark excitons and trions in monolayer WSe2
S. Borghardt, J. Sonntag, J.-S. Tu, T. Taniguchi, K. Watanabe, B. Beschoten, C. Stampfer, and B. E. Kardynal, Opt. Mater. Express 10, 1273 (2020).

Excellent electronic transport in heterostructures of graphene and monoisotopic boron-nitride grown at atmospheric pressure
J. Sonntag, J. Li, A. Plaud, A. Loiseau, J. Barjon, J. H. Edgar, and C. Stampfer, 2D Materials 7, 031009 (2020).

The dependence of the high-frequency performance of graphene field-effect transistors on channel transport properties
M. Asad, M. Bonmann, X. Yang, A. Vorobiev, K. Jeppson, L. Banszerus, M. Otto, C. Stampfer D. Neumaier, and J. Stake, IEEE Journal of the Electron Devices Society 8, 457, (2020)

Unveiling valley lifetimes of free charge carriers in monolayer WSe2
M. Ersfeld, F. Volmer, L. Rathmann, L. Kotewitz, M. Heithoff, M. Lohmann, B. Yang, K. Watanabe, T. Taniguchi, L. Bartels, J. Shi, C. Stampfer, and B. Beschoten, Nano Lett. 20, 3147 (2020)

Single-electron double quantum dots in bilayer graphene
L. Banszerus*, S. Möller*, E. Icking*, K. Watanabe, T. Taniguchi, C. Volk, and C. Stampfer, Nano Lett. 20, 2005 (2020)

Manufacture and characterization of graphene membranes with suspended silicon proof masses for MEMS and NEMS applications
X. Fan, A. D. Smith, F. Forsberg, S. Wagner, S. Schröder, S. S. A. Akbari, A. C. Fischer, L. G. Villanueva, M. Östling, M. C. Lemme, and F. Niklaus, Microsyst. Nanoeng. 6, 17 (2020)

A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology
D. Fadil, V. Passi, W. Wei, S. Ben Salk, D. Zhou, W. Strupinski, M. C. Lemme, T. Zimmer, E. Pallecchi, Emiliano, H. Happy, S. Fregonese, Appl. Sci., 10, 2183 (2020)

Electron Transport across Vertical Silicon/MoS2/Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene Base Hot Electron Transistors
M. Belete, O. Engstrom, S. Vaziri, G. Lippert, M. Lukosius, S. Kataria, and M. C. Lemme, ACS Applied Materials & Interfaces, 2020, XXXX.

Optimizing Dirac fermions quasi-confinement by potential smoothness engineering
B. Brun, N. Moreau, S. Somanchi, V.-H. Nguyen, A. Mreńca-Kolasińska, K. Watanabe, T. Taniguchi, J.-C. Charlier, C. Stampfer, and B. Hackens, 2D Materials 7, 025037 (2020)

Effects of Self-Heating on fT and fmax Performance of Graphene Field-Effect Transistors
M. Bonmann, M. Krivic, X. Yang, A. Vorobiev, L. Banszerus, C. Stampfer, M. Otto, D. Neumaier, and J. Stake, IEEE Transactions on Electron Devices, 67, 1277 (2020)

Production and processing of graphene and related materials
C, Backes, A, Abdelkader, C, Alonso, A. Andrieux, R. Arenal, J. Azpeitia, N. Balakrishnan, L. Banszerus, …, C. Stampfer, …, A. Ferrari, and M. Garcia-Hernandez, 2D Materials 7, 022001 (2020)

Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion‐Based Plasticity
M. Belete, S. Kataria, A. Turfanda, S. Vaziri, T. Wahlbrink, O. Engström, M. C. Lemme, Adv. Electron. Mater. 2020, 1900892.

Exfoliated hexagonal BN as gate dielectric for InSb nanowire quantum dots with improved gate hysteresis and charge noise
F. Jekat, B. Pestka, D. Car, S. Gazibegović, K. Flöhr, S. Heedt, J. Schubert, M. Liebmann, E. P. A. M. Bakkers, T. Schäpers, and M. Morgenstern, Applied Physics Letters 116, 253101 (2020); doi:10.1063/5.0002112

2019

Hybrid J-Aggregate-Graphene Phototransistor
O. Yakar, O. Balci, B. Uzlu, N. Polat, O. Ari, I. Tunc, C. Kocabas, S. Balci, ACS Appl. Nano Mater. (2019)

Gate-tunable graphene-based Hall sensors on flexible substrates with increased sensitivity
B. Uzlu, Z. Wang, S. Lukas, M. Otto, M. C. Lemme, and D. Neumaier, Scientific Reports 9, 18059 (2019) 

PtSe2 grown directly on polymer foil for use as a robust piezoresistive sensor
C. S. Boland, C. O. Coileain, S. Wagner, J. B. McManus, C. P. Cullen, M. C. Lemme, G. S. Duesberg, and N. McEvoy,  2D Materials 6, 045029 (2019)

Suspended Graphene Membranes with Attached Silicon Proof Masses as Piezoresistive Nanoelectromechanical Systems Accelerometers
X. Fan, F. Forsberg, A. D. Smith, S. Schröder, S. Wagner, M. Östling, M. C. Lemme, and F. Niklaus, Nano Lett. 19, 6788 (2019)

Graphene ribbons with suspended masses as transducers in ultra-small nanoelectromechanical accelerometers
X. Fan, F. Forsberg, A. D. Smith, S. Schröder, S. Wagner, H. Rödjegård, A. C. Fischer, M. Östling, M. C. Lemme, and F. Niklaus, Nature Electronics 2, 394 (2019) 

Graphene Membranes for Hall Sensors and Microphones Integrated with CMOS-Compatible Processes
S. Wittmann, C. Glacer, S. Wagner, S. Pindl, and M. C. Lemme, ACS Appl. Nano Mater. 2, 5079 (2019)

Improved understanding of metal–graphene contacts
F. Driussi, S. Venica, A. Gahoi, A. Gambi, P. Giannozzi, S. Kataria, M. C. Lemme, P. Palestri, and D. Esseni, Microelectronic Engineering 216, 111035, (2019)

Large-Signal Model of the Metal-Insulator-Graphene Diode Targeting RF Applications
F. Pasadas, M. Saeed, A. Hamed, Z. Wang, R. Negra, D. Neumaier, and D. Jimenez,  IEEE Electron Device Letters 40, 1005, (2019)

Integrating graphene into semiconductor fabrication lines
D. Neumaier, S. Pindl, and M. C. Lemme, Nature Materials 18, 525 (2019)

Few-Layer MoS2/a-Si:H Heterojunction Pin-Photodiodes for Extended Infrared Detection
A. Bablich, D. S. Schneider, P. Kienitz, S. Kataria, S. Wagner, C. Yim, N. McEvoy, O. Engstrom, J. Mueller, Y. Sakalli, B. Butz, G. S. Duesberg, P. H. Bolivar, and M. C. Lemme, ACS Photonics 6, 1372 (2019)

Probing the mechanical properties of vertically-stacked ultrathin graphene/Al2O3 heterostructures
M. Munther, M. Shaygan, A. Centeno, D. Neumaier, A. Zurutuza, K. Momeni, and K. Davami,  Nanotechnology 30, 185703 (2019)

Ultralow Specific Contact Resistivity in Metal–Graphene Junctions via Contact Engineering
V. Passi, A. Gahoi, E. G. Marin, T. Cusati, A. Fortunelli, G. Iannaccone, G. Fiori, and M. C. Lemme, Advanced Materials Interfaces 6, 1801285 (2019)

High Responsivity and Quantum Efficiency of Graphene/Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions
S. Riazimehr, S. Kataria, J. M. Gonzalez-Medina, S. Wagner, M. Shaygan, S. Suckow, F. G. Ruiz, O. Engstroem, A. Godoy, and M. C. Lemme, ACS Photonics 6, 107 (2019)

Accurate Graphene-Metal Junction Characterization
M. Koenig, G. Ruhl, A. Gahoi, S. Wittmann, T. Preis, J.-M. Batke, I. Costina, and M. C. Lemme, IEEE Journal of the Electron Devices Society 7, 219 (2019)

Insulating state in low-disorder graphene nanoribbons
A. Epping, C. Volk, F. Buckstegge, K. Watanabe, T. Taniguchi, and C. Stampfer, Phys. Status Solidi B Early View, 1900269 (2019)

Vielfalt in zwei Dimensionen
C. Stampfer, B. Beschoten, and S. Staacks, Physik Journal 18, 29 (2019)

Integrated impedance bridge for absolute capacitance measurements at cryogenic temperatures and finite magnetic fields
G. J. Verbiest, H. Janssen, D. Xu, X. Ge, M. Goldsche, J. Sonntag, T. Khodkov, L. Banszerus, N. von den Driesch, D. Buca, K. Watanabe, T. Taniguchi, and C. Stampfer, Review of Scientific Instruments 90, 084706 (2019)

Engineering Tunable Strain Fields in Suspended Graphene by Microelectromechanical Systems
J. Sonntag, M. Goldsche, T. Khodkov, G. Verbiest, S. Reichardt, N. von den Driesch, D. Buca, and C. Stampfer, Proc. of the 20th International Conference on Solid-State Sensors, Actuators and Microsystems IEEE-Transducer, 266-269 (2019)

Imaging Dirac fermions flow though a circular Veselago lens
B. Brun, N. Moreau, S. Somanchi, V.-H. Nguyen, K. Watanabe, T. Taniguchi, J.-C. Charlier, C. Stampfer, and B. Hackens, Phys. Rev. B 100, 041401(R) (2019)

Spin States Protected from Intrinsic Electron-Phonon-Coupling Reaching 100 ns Lifetime at Room Temperature in MoSe2
M. Ersfeld, F. Volmer, P. M. M. C. de Melo, R. de Winter, M. Heithoff, Z. Zanolli, C. Stampfer, M. J. Verstraete, and B. Beschoten, Nano Letters 19, 4083 (2019)

A corner reflector of graphene Dirac fermions as a phonon-scattering sensor
H. Graef, Q. Wilmart, M. Rosticher, D. Mele, L. Banszerus, C. Stampfer, T. Taniguchi, K. Watanabe, J.-M. Berroir, E. Bocquillon, G. Fève, E. H. T. Teo, and B. Plaçais, Nature Communications 10, 2428 (2019)

Graphene field-effect transistors with high extrinsic fT and fmax
M. Bonmann, M. Asad, X. Yang, A. Generalov, A. Vorobiev, L. Banszerus, C. Stampfer, M. Otto, D. Neumaier, and J. Stake, IEEE Electron Device Letters 40, 131-134 (2019)

Pilot-scale fabrication and analysis of graphene-nanocomposite fibers

B. A. Weise, K. G. Wirth, L. Völkel, M. Morgenstern, and G. Seide,

Protection of one-dimensional Si chains embedded in Pt(111) and protected by a hexagonal boron-nitride monolayer
S. Rose, P. Nemes-Incze, M. Pratzer, V. Caciuk, N. Atodiresei, and M. Morgenstern,

Surface Science 685, 24-33 (2019).

2018

Humidity and CO2 gas sensing properties of double-layer graphene
X. Fan, K. Elgammal, A. D Smith, M. Östling, A. Delin, M. C Lemme, F. Niklaus
Carbon 127, 576 (2018)

Ultralow Specific Contact Resistivity in Metal–Graphene Junctions via Contact Engineering
V. Passi, A. Gahoi, E. G Marin, T. Cusati, A. Fortunelli, G. Iannaccone, G. Fiori, M. C Lemme
Advanced Materials Interfaces 1801285 (2018)

Mapping the band structure of GeSbTe phase change alloys around the Fermi level
J. Kellner, G.. Bihlmayer, M. Liebmann, S. Otto, C. Pauly, J. Boschker, V. Bragaglia, S. Cecchi, R. N. Wang, V. L. Deringer, P. Küppers, P. Bhaskar, E. Golias, J. Sanchez-Barriga, T. Fauster, O. Rader, R. Calarco, and M. Morgenstern
Commun. Phys. 1, 5 (2018)

Mask aligner for ultrahigh vacuum with capacitive distance control
P. Bhaskar, S. Mathioudakis, T. Olschewski, F. Muckel, J. Ra. Bindel, M. Pratzer, M. Liebmann, and M. Morgenstern
Appl. Phys. Lett. 112, 161602 (2018)

Graphene-based integrated photonics for next-generation datacom and telecom
M. Romagnoli, V. Sorianello, M. Midrio, F.H.L. Koppens, C. Huyghebaert,
D. Neumaier, P. Galli, W. Templ, A. D’Errico, and A. C. Ferrari
Nature Reviews Materials 3 (10), 392 (2018)

Graphene field-effect transistors with high extrinsic fT and fmax
M. Bonmann, M. Asad, X. Yang, A. Generalov, A. Vorobiev, L. Banszerus,
C. Stampfer, M. Otto, D. Neumaier, and J. Stake
IEEE Electron Device Letters ASAP (2018)

Graphene Photodetector Integrated on a Photonic Crystal Defect Waveguide
S. Schuler, D. Schall, D. Neumaier, B. Schwarz, K. Watanabe, T. Taniguchi,
and T. Mueller
ACS Photonics ASAP (2018)

High Responsivity and Quantum Efficiency of Graphene/Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions
S. Riazimehr, S. Kataria, J. M. Gonzalez-Medina, S. Wagner, M. Shaygan,
S. Suckow, F. G. Ruiz, O. Engström, A. Godoy, and M. C. Lemme
ACS Photonics, Article ASAP (2018)

Proximity-Induced Spin-Orbit Coupling in Graphene-Bi1.5Sb0.5Te1.7Se1.3 Heterostructures
S. Jafarpisheh, A. W. Cummings, K. Watanabe, T. Taniguchi, B. Beschoten, and C. Stampfer
Phys. Rev. B 98, 241402(R) (2018)

Ultra-long wavelength Dirac plasmons in graphene capacitors
H. Graef, D. Mele, M. Rosticher, L. Banszerus, C. Stampfer, T. Taniguchi, K. Watanabe, E. Bocquillon, G. Fève, J.-M. Berroir, E. H. T. Teo, and B. Plaçais
J. Phys. Mater. 1, 01LT02 (2018)

Low-frequency Noise Characterization of Graphene FET THz Detectors
X. Yang, A. Vorobiev, K. Jeppson, J. Stake, L. Banszerus, C. Stampfer, M. Otto,
and D. Neumaier
43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

All CVD Boron Nitride Encapsulated Graphene FETs
H. Pandey, M. Shaygan, S. Sawallich, S. Kataria, M. Otto, Z. Wang, M .Nagel, D. Neumaier, and M. C. Lemme
76th Device Research Conference (DRC), 1-2 (2018)

Improved luminescence properties of MoS2 monolayers grown via MOCVD: role of pre-treatment and growth parameters
D. Andrzejewski, M. Marx, A. Grundmann, O. Pfingsten, H. Kalisch, A. Vescan, T. Kümmell, and G. Bacher
Nanotechnology 29, 295704 (2018)

Dielectric Properties and Ion Transport in Layered MoS2 Grown by Vapor-Phase Sulfurization for Potential Applications in Nanoelectronics
M. Belete, S. Kataria, U. Koch, M. Kruth, C. Engelhard, J. Mayer, O. Engström, and M. C. Lemme
ACS Appl. Nano Mater. 1,  6197 (2018)

Detecting Ultrasound Vibrations by Graphene Resonators
G. J. Verbiest, J. N. Kirchhof, M. Goldsche, T. Khodkov, J. Sonntag, and C. Stampfer,
Nano Letters 18, 5132 (2018)

Gate-defined electron-hole double dots in bilayer graphene
L. Banszerus, B. Frohn, A. Epping, D. Neumaier, K. Watanabe, T. Taniguchi, and C. Stampfer
Nano Letters 18, 4785 (2018)

Highly Sensitive Electromechanical Piezoresistive Pressure Sensors Based on Large-Area Layered PtSe2 Films
S. Wagner, C. Yim, N. McEvoy, S. Kataria, V. Yokaribas, A. Kuc, S. Pindl, C.-P. Fritzen, T. Heine, G. S. Duesberg, and M. C. Lemme
Nano Letters 18, 3738 (2018)

All CVD Boron Nitride Encapsulated Graphene FETs With CMOS Compatible Metal Edge Contacts
H. Pandey, M. Shaygan, S. Sawallich, S. Kataria, Z. Wang, A. Noculak, M. Otto, M. Nagel, R. Negra, D. Neumaier, and M. C. Lemme
IEEE Transactions on Electron Devices 65, 4129 (2018)

0.15 mm2, DC-70GHz, Graphene-Based Power Detector with Improved Sensitivity and Dynamic Range
M. Saeed, A. Hamed, S. Qayyum, Z. Wang, M. Shaygan, D. Neumaier, and
R. Negra
IEEE/MTT-S International Microwave Symposium-IMS, 1519-1522 (2018)

6–12 GHz MMIC Double-Balanced Upconversion Mixer based on Graphene Diode
A. Hamed, M. Saeed, Z. Wang, M. Shaygan, D. Neumaier, and R. Negra
IEEE/MTT-S International Microwave Symposium-IMS, 674-677 (2018)

Metal-Insulator-Graphene Diode Mixer based on CVD Graphene-on-Glass
M. Saeed, A. Hamed, Z. Wang, M. Shaygan, D. Neumaier, R. Negra
IEEE Electron Device Letters (2018)

Record high bandwidth integrated graphene photodetectors for communication beyond 180 Gb/s
D. Schall, E. Pallecchi, G. Ducournau, V. Avramovic, M. Otto, and D. Neumaier
Optical Fiber Communication Conference, M2I. 4 3 (2018)

Zero-Bias 50-dB Dynamic Range Linear-in-dB V-Band Power Detector Based on CVD Graphene Diode on Glass
M. Saeed, A. Hamed, Z. Wang, M. Shaygan, D. Neumaier, and R. Negra
IEEE Transactions on Microwave Theory and Techniques 66 (4) 4 (2018)

Prospects of graphene use in sensor technology
I. Bolshakova, D. Dyuzhkov, Y. Kost, M. Radishevskiy, F. Shurigin, A. Vasyliev, Z. Wang, M. Otto, and D. Neumaier
14th International Conference on Advanced Trends in Radioelecrtronics, Telecommunications and Computer Engineering (TCSET) (2018 )

Fabrication of comb-drive actuators for straining nanostructured suspended graphene
M. Goldsche, G. J. Verbiest, T. Khodkov, J. Sonntag, N. von den Driesch, D. Buca, and C. Stampfer
Nanotechnology 29, 375301 (2018)

Impact of Many-Body Effects on Landau Levels in Graphene
J. Sonntag, S. Reichardt, L. Wirtz, B. Beschoten, M. I. Katsnelson, F. Libisch, and C. Stampfer
Phys. Rev. Lett. 120, 187701 (2018)

Quantum transport through MoS2 constrictions defined by photodoping
A. Epping, L. Banszerus, J. Güttinger, L. Krückeberg, K. Watanabe, T. Taniguchi, F. Hassler, B. Beschoten, and C. Stampfer
Journal of Physics: Condensed Matter 30, 205001 (2018)

Direct observation of grain boundaries in graphene through vapor hydrofluoric acid (VHF) exposure
X. Fan, S. Wagner, P. Schädlich, F. Speck, S. Kataria, T. Haraldsson, T. Seyller, M. C. Lemme, and F. Niklaus
Science Advances 4, eaar5170 (2018)

Tunable giant valley splitting in edge-free graphene quantum dots on boron nitride
N. M. Freitag, T. Reisch, L. A. Chizhova, P. Nemes-Incze, C. Holl, C. R. Woods, R. V. Gorbachev, Y. Cao, A. K. Geim, K. S. Noveselov, J. Burgdörfer, F. Libisch, and M. Morgenstern
Nature Nanotechnology 13, 392 (2018)

Tailoring mechanically-tunable strain fields in graphene
M. Goldsche, J. Sonntag, T. Khodkov, G. Verbiest, S. Reichardt, C. Neumann, T. Ouaj, N. von den Driesch, D. Buca, and C. Stampfer
Nano Letters 18, 1707 (2018)

Out-of-plane heat transfer in van der Waals stacks through electron–hyperbolic phonon coupling
K.-J. Tielrooij, N. C. H. Hesp, A. Principi, M. Lundeberg, E. A. A. Pogna, L. Banszerus, Z. Mics, M. Massicotte, P. Schmidt, D. Davydovskaya, D. G. Purdie, I. Goykhman, G. Soavi, A. Lombardo, K. Watanabe, T. Taniguchi, M. Bonn, D. Turchinovich, C. Stampfer, A. C. Ferrari, G. Cerullo, M. Polini, and F. H. L. Koppens
Nature Nanotechnology 13, 41 (2018)

Characterization of Graphene by Confocal Raman Spectroscopy
C. Neumann and C. Stampfer, Book Chapter In: J. Toporski, T. Dieing, O. Hollricher (eds) Confocal Raman Microscopy,
Springer Series in Surface Sciences, 66, 177-194 Springer Cham (2018)

Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS2
M. Marx, A. Grundmann, Y.-R. Lin, D. Andrzejewski, T. Kümmell, G. Bacher, M. Heuken, H. Kalisch, and A. Vescan
Journal of Electronic Materials 47, 2 (2018)

Graphene integrated circuits: new prospects towards receiver realisation
M. Saeed, A. Hamed, Z. Wang, M. Shaygan, D. Neumaier, and R. Negra
Nanoscale 10, 93 (2018)

All CVD Boron Nitride Encapsulated Graphene FETs With CMOS Compatible Metal Edge Contacts
Pandey, M. Shaygan, S. Sawallich, S. Kataria, Z. Wang, A. Noculak, M. Otto, M. Nagel, R. Negra, D. Neumaier, and M. C. Lemme
IEEE Transactions on Electron Devices 65, 4129 (2018)

Redefining Responsivity in Graphene-based Schottky Diodes
Riazimeher, S. Kataria, J.M. Gonzalez, M. Shaygan, S. Suckow,
76th Device Research Conference, DRC 2018, 2018-06-24 – 2018-06-27, Santa Barbara, CA, USA (2018)

2D materials for piezoresistive strain gauges and membrane based nanoelectromechanical systems
St. Wagner
Doctorial Thesis (2018)

All CVD Boron Nitride Encapsulated Graphene FETs
Pandey, M. Shaygan, S. Sawallich, S. Kataria, M. Otto et al.
76th Device Research Conference (DRC) : 24-27 June 2018 / IEEE Electron Device Society (EDS), technical co-sponsor, Materials Research Society (MRS) – co-sponsor (2018)

Efficient Metal-Halide Perovskite Micro Disc Lasers Integrated in a Silicon Nitride Photonic Platform
P.J. Cegielski, S. Neutzner, C. Porschatis, M. Gandini, D. Schall, et al.
76th Device Research Conference, DRC, 2018-06-24 – 2018-06-27, Santa Barbara, CA, USA (2018)

Transfer-Free In Situ CCVD Grown Nanocrystalline Graphene for Sub-PPMV Ammonia Detection
Noll, P. Hönicke, Y. Kayser, S. Wagner, B. Beckhoff et al.
ECS journal of solid state science and technology, 7 (7), Q3108-Q3113  (2018)

Overlay accuracy limitations of soft stamp UV nanoimprint lithography and circumvention strategies for device applications
P.J. Cegielski, J. Bolten, J. W. Kim, F. Schlachter, C. Nowak et al.
Microelectronic engineering, 197, 83-86, 2018

MAC-oriented programmable terahertz PHY via graphene-based Yagi-Uda antennas
S.E. Hosseininejad, S. Abadal, M. Neshat, R. Faraji-Dana, M.C. Lemme et al.
IEEE Wireless Communications and Networking Conference (WCNC), April 15-18, Barcelona, Spain (2018)

Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method
Venica, F. Driussi, A. Gahoi, S. Kataria, P. Pierpaolo et al.
IEEE International Conference on Microelectronic Test Structures (ICMTS) : [Proceedings] – IEEE (2018)

On the Adequacy of the Transmission Line Model to Describe the Graphene–Metal Contact Resistance
Venica, F. Driussi, A. Gahoi, P. Palestri, M.C. Lemme et al.
IEEE transactions on electron devices, 65 (4), 1589 – 1596 (2018)

Electrical devices from top-down structured platinum diselenide films
Yim, V. Passi, M.C. Lemme, G.S. Duesberg, C.A. Coileáin et al.
npj 2D materials and applications, 2 (1), 5 (2018)

Wide Spectral Photoresponse of Layered Platinum Diselenide-Based Photodiodes
Yim, N. McEvoy, S. Riazimehr, D.S. Schneider, F. Gity et al.
Nano letters, 18 (3), 1794-1800 (2018)

2017

High Voltage Gain Inverters From Artificially Stacked Bilayer CVD Graphene FETs
H. Pandey, S. Kataria, A. Gahoi, M. C. Lemme

IEEE Electron Device Letters 38, 1747 (2017)

GrowthInduced Strain in Chemical Vapor Deposited Monolayer MoS2: Experimental and Theoretical Investigation
S.Kataria, S. Wagner, T. Cusati, A. Fortunelli, G. Iannaccone, H. Pandey, G. Fiori, M. C Lemme
Advanced Materials Interfaces 4, 1700031 (2017)

Material-Dependencies of the THz emission from plasmonic graphene-based

photoconductive antenna structures
C. Suessmeier, S. Abadal, D. Stock, S. Schaeffer, E. Alarcón, S. E. Hosseininejad, A. K. Wigger, S. Wagner, A. C.-Aparicio, M. C. Lemme, P. H. Bolívar
42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) 2017, 1-2 (2017)

Properties of Metal/High-k Oxide/Graphene Structure
O. Engström, M. C. Lemme, O. Habibpour
ECS Transactions 80, 157 (2017)

Scalable Growth of Two-Dimensional Materials–a Prerequisite for Process Integration
S. Kataria, S. Wagner, M. C. Lemme
ECS Transactions 80, 259 (2017)

Graphene-based CO2 sensing and its cross-sensitivity with humidit
A. D Smith, K. Elgammal, X. Fan, M. C Lemme, A. Delin, M. Råsander, L. Bergqvist, S. Schröder, A. C Fischer, F. Niklaus, M. Östling
RSC Advances 7, 22329 (2017)

High photocurrent in gated graphene–silicon hybrid photodiodes
S. Riazimehr, S. Kataria, R. Bornemann, P.H. Bolívar, F. J. G. Ruiz, O. Engström, A. Godoy, M. C. Lemme
ACS Photonics 4, 1506 (2017)

Flexible hybrid graphene/a-Si:H multispectral photodetectors
D.S  Schneider, A. Bablich, M. C. Lemme
Nanoscale 9, 8573 (2017)

Strain Gauges Based on CVD Graphene Layers and Exfoliated Graphene Nanoplatelets with Enhanced Reproducibility and Scalability for Large Quantities
V. Yokaribas, S. Wagner, D.S  Schneider, P.  Friebertshäuser, M. C. Lemme, C.-P. FritzenSensors 17 , 2937 (2017)
Sensors 17 , 2937 (2017)

Chemical Tuning of Carrier Type and Concentration in a Homologous Series of Crystalline Chalcogenides
T. Schäfer, P. M. Konze, J. D. Huyeng, V. L. Deringer, T. Lesieur, P. Müller, M. Morgenstern, R. Dronskowski, and M. Wuttig
Chem. Mat. 29, 6749 (2017)

An ultrahigh-vacuum cryostat for simultaneous scanning tunneling microscopy and magneto-transport measurements down to 400 mK
M. Liebmann, J. R. Bindel, M. Pezzotta, S. Becker, F. Muckel, T. Johnsen, C. Saunus, C. R. Ast, and M. Morgenstern
Rev. Sci. Instr. 88, 123707 (2017)

Exploring the subsurface atomic structure of the epitaxially grown phase change material Ge2Sb2Te5
J. Kellner, G. Bihlmayer, V. L. Deringer, M. Liebmann, C. Pauly, A. Giussani, J. Boschker, R. Calarco, R. Dronskowski, and M. Morgenstern
Phys. Rev. B 96, 245408 (2017)

Electrical properties of graphene-metal contacts
T. Cusati, G. Fiori, A. Gahoi, V. Passi, M. C. Lemme, A. Fortunelli, and G. Iannaccone
Scientific Reports 7, 5109 (2017)

Aharonov-Bohm oscillations and magnetic focusing in ballistic graphene rings
J. Dauber, M. Oellers, F. Venn, A. Epping, K. Watanabe, T. Taniguchi, F. Hassler, and C. Stampfer
Phys. Rev. B 96, 205407 (2017)

Raman Spectroscopy of Lithographically Defined Graphene Nanoribbons – Influence of Size and Defects
F. Kampmann, N. Scheuschner, B. Terrés, D. Jörger, C. Stampfer, and J. Maultzsch
Annalen der Physik 529, 1700167 (2017)

Enhanced Intrinsic Voltage Gain in Artificially Stacked Bilayer CVD Graphene Field Effect Transistors
H. Pandey,J.‐D. Aguirre‐Morales, S. Kataria, S. Fregonese, V. Passi, M. Iannazzo, T. Zimmer, E. Alarcon, M. C. Lemme
Annalen der Physik 529, 1700106 (2017)

Graphene Quantum Dots Probed by Scanning Tunneling Microscopy
M. Morgenstern, N. Freitag, A. Nent, P. Nemes-Incze, and M. Liebmann
Annalen der Physik 529, 1700018 (2017)

From diffusive to ballistic transport in etched graphene constrictions and nanoribbons
S. Somanchi, B. Terrés, J. Peiro, M. Staggenborg, K. Watanabe, T. Taniguchi, B. Beschoten, and C. Stampfer
Annalen der Physik 529, 1700082 (2017)

Carrier Dynamics in Graphene: Ultrafast Many-Particle Phenomena
E. Malic, T. Winzer, F. Wendler, S. Brem, R. Jago, A. Knorr, M. Mittendorff, J. C. König-Otto, T. Plötzing, D. Neumaier, H. Schneider, M. Helm, and S. Winnerl
Annalen der Physik 529, 1700038 (2017)

Low resistive edge contacts to CVD-grown graphene using a CMOS compatible metal
M. Shaygan, M. Otto, A. A. Sagade, C. A. Chavarin, G. Bacher, W. Mertin and
D. Neumaier
Annalen der Physik 529, 1600410 (2017)

High quality factor graphene-based 2D heterostructure mechanical resonator
M. Will, M. Hamer, M. Müller, A. Noury, P. Weber, A. Bachtold, R. V. Gorbachev, C. Stampfer, and J. Güttinger
Nano Letters 17, 5950 (2017)

Graphene photodetectors with a bandwidth > 76 GHz fabricated in a 6″ wafer process line
D. Schall, C. Porschatis, M. Otto, and D. Neumaier
J. Phys. D: Appl. Phys 50, 124004 (2017)

Dry transfer of CVD graphene using MoS2-based stamps
L. Banszerus, K. Watanabe, T. Taniguchi, B. Beschoten, and C. Stampfer
Physica Status Solidi (RRL) 11, 1700136 (2017)

The integration of graphene into microelectronic devices
G Ruhl, S Wittmann, M Koenig and D Neumaier
Beilstein Journal of Nanotechnology 8, 1056 (2017)

Simulations on the gate dependent spin lifetime in graphene non-local spin valve devices
M. Drögeler, F. Volmer, C. Stampfer, and B. Beschoten
Physica Status Solidi B 254, 1700293 (2017)

Identifying suitable substrates for high-quality graphene-based heterostructures
L. Banszerus, H. Janssen, M. Otto, A. Epping, T. Taniguchi, K. Watanabe, B. Beschoten, D. Neumaier and C. Stampfer
2D Materials 4, 025030 (2017)

Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
M. Mohsin, D. Schall, M. Otto, B. Chmielak, C. Porschatis, J. Bolten
Optics express 25, 31660-31669 1 (2017)

High-quality dry transferred CVD bilayer graphene
M. Schmitz, S. Engels, L. Banszerus, K. Watanabe, T. Taniguchi, C. Stampfer,
B. Beschoten
Appl. Phys. Lett. 111, 152402 (2017)

A two-dimensional Dirac fermion microscope
P. Bøggild, J. M. Caridad, C. Stampfer, G. Calogero, N. R. Papior, and M. Brandbyge
Nature Communications 8, 15783 (2017)

Bi1Te1 is a dual topological insulator
M. Eschbach, M. Lanius, C. Niu, E. Młyńczak, P. Gospodarič, J. Kellner, P. Schüffelgen, M. Gehlmann, S. Döring, E. Neumann, M. Luysberg, G. Mussler, L. Plucinski, M. Morgenstern, D. Grützmacher, G. Bihlmayer, S. Blügel, and C. M.
Schneider
Nature Communications 8, 14976 (2017)

Probing the Nodal Structure of Landau Level Wave Functions in Real Space J. R. Bindel, J. Ulrich, M. Liebmann, and M. Morgenstern
Phys. Rev. Lett. 118, 16803 (2017)

Tuning the Pseudospin Polarization of Graphene by a Pseudomagnetic Field
A. Georgi, P. Nemes-Incze, R. Carrillo-Bastos, D. Faria, S. Viola Kusminskiy, D. Zhai, M. Schneider, D. Subramaniam, T. Mashoff, N. M. Freitag, M. Liebmann, M. Pratzer, L. Wirtz, C. R. Woods, R. V. Gorbachev, Y. Cao, K. S. Novoselov, N. Sandler, and M. Morgenstern
Nano Letters 17, 2240 (2017)

Inter-valley dark trion states with spin lifetimes of 150 ns in WSe2
F. Volmer, S. Pissinger, M. Ersfeld, S. Kuhlen, C. Stampfer, and B. Beschoten
Phys. Rev. B 95, 235408 (2017)

Large-area MoS2 deposition via MOVPE
M. Marx, S. Nordmann, J. Knoch, C. Franzen, C. Stampfer, D. Andrzejewski, T. Kümmell, G. Bacher, M. Heuken, H. Kalisch, and A. Vescan
Journal of Crystal Growth 464, 100 (2017)

Program FFlexCom—High frequency flexible bendable electronics for wireless communication systems
T. Meister, F. Ellinger, J.W. Bartha, M. Berroth, J. Burghartz, M. Claus, L. Frey
Microwaves, Antennas, Communications and Electronic Systems (COMCAS)  1 (2017)

Millimeter-wave graphene-based varactor for flexible electronics
M. Saeed, A. Hamed, C.Y. Fan, E. Heidebrecht, R. Negra, M. Shaygan, Z. Wang, D. Neumaier
Microwave Integrated Circuits Conference (EuMIC), 2017 12th European, 117-120 (2017)

Graphene and prospects of radiation-hard hall sensors
I. Bolshakova, D. Dyuzhkov, Y. Kost, M. Radishevskiy, F. Shurigin, A. VasylievI , Z. Wang, M. Otto, D. Neumaier, M. Bulavin, A. Kulikov
Nanomaterials: Application & Properties (NAP), 2017 IEEE 7th International (2017)

Flicker noise in graphene-based Hall sensors
A. Porciatti, Z. Wang, P. Marconcini, G. Pennelli, G. Basso, D. Neumaier, M. Bulavin, A. Kulikov
Noise and Fluctuations (ICNF), 2017 International Conference on, 1-4 (2017)

Zero-bias, 50 dB dynamic range, V-band power detector based on CVD graphene-on-glass
M. Saeed, A. Hamed, R. Negra, M. Shaygan, Z. Wang, D. Neumaier
Microwave Symposium (IMS), 2017 IEEE MTT-S International, 1649-1652 2 (2017)

Electrically tunable optical nonlinearity of graphene-covered SiN waveguides
K. Alexander, M. Mohsin, U.D. Dave, L.A. Shiramin, S. Clemmen, D. Neumaier, B. Kuyken, D. Van Thourhout
Lasers and Electro-Optics (CLEO), 2017 Conference on, 1-2 (2017)

Integrated graphene photodetector based on a gate-controlled pn-junction (Conference Presentation)
S. Schuler, D. Schall, D. Neumaier, L. Dobusch, O. Bethge, B. Schwarz, M. Krall, T. Mueller
Integrated Optics: Devices, Materials, and Technologies XXI 10106, 1010611 (2017)

Towards the predicted high performance of waveguide integrated electro-refractive phase modulators based on graphene
M. Mohsin, D. Schall, M. Otto, B. Chmielak, S. Suckow, D. Neumaier
IEEE Photonics Journal 9 (1), 1-7 4 (2017)

High performance metal–insulator–graphene diodes for radio frequency power detection application
M. Shaygan, Z. Wang, M.S. Elsayed, M. Otto, G. Iannaccone, A.H. Ghareeb, G. Fiori, R. Negra, D. Neumaier
Nanoscale 9 (33), 11944-11950 11 (2017)

2016

Towards the predicted high performance of waveguide integrated electro-refractive phase modulators based on graphene
M. Mohsin, D. Schall, M. Otto, B. Chmielak, S. Suckow, D. Neumaier
IEEE Photonics Journal,  9 Issue 1, (2016)

Complex effective index in graphene-silicon waveguides
V. Sorianello, G. De Angelis, T. Cassese, Michele Midrio, M. Romagnoli, M. Mohsin, M. Otto, Daniel Neumaier, I. Asselberghs, J. Van Campenhout, C. Huyghebaert
Optics Express 24, 29984 (2016)

Contact-free High-resolution Conductivity Mapping of Large-area Graphene Covered with an Ion Gel Top-gate
S. Sawallich, M. Mohsin, C. Matheisen, D. Neumaier, M. Nagel
IEEE 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) (2016)

Flexible Hall Sensors Based on Graphene
Z.Wang, M. Shaygan, M. Otto, D. Schall, D. Neumaier
Nanoscale 8, 7683 (2016)

Infrared transparent graphene heater for silicon photonic integrated circuits
D. Schall, M. Mohsin, A. A. Sagade, M. Otto, B. Chmielak, S. Suckow, A. L. Giesecke, D. Neumaier, and H. Kurz
Optics Express 24, 7871 (2016)

Encapsulated graphene-based Hall sensors on foil with increased sensitivity
Z. Wang, L. Banszerus, M. Otto, K. Watanabe, T. Taniguchi, C. Stampfer,
D. Neumaier
Physica Status Solidi B 253, 2316 (2016)

Controlled generation of a pn-junction in a waveguide integrated graphene photodetector
S. Schuler, D. Schall, D. Neumaier, L. Dobusch, O. Bethge, B. Schwarz, M. Krall, and T. Mueller
Nano Letters 16, 7107 (2016)

Apparent rippling with honeycomb symmetry and tunable periodicity observed by scanning tunneling microscopy on suspended graphene
A. Georgi, P. Nemes-Incze, B. Szafranek, D. Neumaier, V. Geringer, M. Liebmann, and M. Morgenstern
 
Phys. Rev. B 94, 184302 (2016)

Spin mapping of surface and bulk Rashba states in ferroelectric $ensuremath{alpha}$-GeTe(111) films
H. J. Elmers, R. Wallauer, M. Liebmann, J. Kellner, M. Morgenstern, R. N. Wang, J. E. Boschker, R. Calarco, J. Sánchez-Barriga, O. Rader, D. Kutnyakhov, S. V. Chernov, K. Medjanik, C. Tusche, M. Ellguth, H. Volfova, S. Borek, J. Braun, J. Minár, H. Ebert, and G. Schönhense

Phys. Rev. B 94, 201403 (2016)

Probing variations of the Rashba spin-orbit coupling at the nanometre scale
J. R. Bindel, M. Pezzotta, J. Ulrich, M. Liebmann, E. Y. Sherman, and M. Morgenstern
 
Nature Physics 12, 920 (2016)

Electronic Structure of the Dark Surface of the Weak Topological Insulator Bi14Rh3I9
C. Pauly, B. Rasche, K. Koepernik, M. Richter, S. Borisenko, M. Liebmann, M. Ruck, J. van den Brink, and M. Morgenstern

ACS Nano 10, 3995 (2016)

Graphene quantum dots: wave function mapping by scanning tunneling spectroscopy and transport spectroscopy of quantum dots prepared by local anodic oxidation
M. Morgenstern, N. Freitag, A. Vaid, M. Pratzer, and M. Liebmann 
Physica Status Solidi (RRL) 10, 24 (2016)

Electrostatically Confined Monolayer Graphene Quantum Dots with Orbital and Valley Splittings
N. M. Freitag, L. A. Chizhova, P. Nemes-Incze, C. R. Woods, R. V. Gorbachev, Y. Cao, A. K. Geim, K. S. Novoselov, J. Burgdörfer, F. Libisch, and M. Morgenstern
Nano Letters 16, 5798 (2016)

Giant Rashba-Type Spin Splitting in Ferroelectric GeTe(111)
M. Liebmann, C. Rinaldi, D. Di Sante, J. Kellner, C. Pauly, R. N. Wang, J. E. Boschker, A. Giussani, S. Bertoli, M. Cantoni, L. Baldrati, M. Asa, I. Vobornik, G. Panaccione, D. Marchenko, J. Sánchez-Barriga, O. Rader, R. Calarco, S. Picozzi, R. Bertacco, and M. Morgenstern
 
Advanced Materials 28, 560 (2016)