How to report and benchmark emerging field-effect transistors

One of the challenges encountered by research on novel electronic devices is to compare devices based on different materials in a consistent way. RWTH Professor Max Lemme and colleagues from USA, China, and Belgium have now proposed a set of clear guidelines for benchmarking key parameters and performance metrics of emergent field-effect transistors. The guidelines have been published as a Perspective Article in Nature Electronics.

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New perspectives on Layer Transfer and Artificial Crystalline Heterostructures at IKZ – A talk by Dr. Jens Martin

Dr. Jens Martin, from the Leibniz-Insitut für Kristallforschung (IKZ) in Berlin, has been the speaker of the 30th Aachen Graphene Center Seminar. Dr. Martin is the head of the section Semiconductor Nanostructures at IKZ, and one of the coordinators of the IKZ-IRIS Joint Lab “Layer Transfer for 2D-Heterostructures“.  In his talk, presented the recent advances of his group on the growth, release and transfer of thin epitaxial perovskite films, as well in on the in-situ growth of 2D-vdW multilayers and heterostructures.

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