Researchers from RWTH Aachen University, AMO GmbH, Stanford University and IHP have demonstrated that heterostructures formed by silicon, molybdenum disulfide (MoS2) and graphene are potential candidates as emitter-diodes of graphene-base hot-electron transistors.
Continue reading “An efficient emitter for graphene-base hot electron transistors”Two new FLAG-ERA projects in Aachen
The Aachen Graphene & 2D Materials Center has won two projects on basic research and innovation on graphene in the last FLAG-ERA Joint Transnational Call.
Continue reading “Two new FLAG-ERA projects in Aachen”How to make graphene (and 5000+ related materials)
The Graphene Flagship has just released an extensive review article on the methods for producing and processing graphene and related materials. The article includes the knowledge of 70 co-authors and aims at being a single source of knowledge on graphene and related materials and a tool to facilitate their uptake in commercial applications.
Continue reading “How to make graphene (and 5000+ related materials)”Spin-orbit proximity phenomena and tunable spin-to-charge conversion in graphene – A talk by Prof. Sergio Valenzuela (ICREA, ICN2)
On Tuesday, January 21, the Aachen Graphene & 2D Materials Centers will host a talk by Prof. Sergio Valenzuela, from the Catalan Institution for Research and Advanced Studies (ICREA) and the Catalan Institute of Nanoscience and Nanotechnology (ICN2).
Continue reading “Spin-orbit proximity phenomena and tunable spin-to-charge conversion in graphene – A talk by Prof. Sergio Valenzuela (ICREA, ICN2)”Call for applications: RWTH Junior Principal Investigator Fellowships
The Aachen Graphene & 2D Materials Center is eager to support excellent candidates in their application for the Fellowship.
Continue reading “Call for applications: RWTH Junior Principal Investigator Fellowships”Non-volatile resistive switching in memristors based on MoS2
Melkamu Belete and colleagues at ELD, AMO and Stanford University have demonstrated non-volatile resistive switching in memristors with vertically aligned 2D layers of molybdenum disulfide (MoS2) as active material.
Continue reading “Non-volatile resistive switching in memristors based on MoS2”The Graphene Revolution: From Transistors to Synthetic Cells – A talk by Prof. Tomás Palacios (MIT)
On January 16, 2020, the Aachen Graphene & 2D Materials center will host a seminar by Prof. Tomás Palacios, with the title “The Graphene Revolution: From Transistors to Synthetic Cells”.
Continue reading “The Graphene Revolution: From Transistors to Synthetic Cells – A talk by Prof. Tomás Palacios (MIT)”What’s new on electrostatically defined quantum dots in bilayer graphene at ETH Zürich: a seminar by Dr. Annika Kurzmann
On Friday, November 29, the Aachen Graphene and 2D Materials Center will have another cutting-edge seminar on graphene research: Dr. Annika Kurzmann, a post-doc in Klaus Ensslin’s group at ETH Zürich, will present her latest results on electrostatically defined quantum dots in bilayer graphene.
Continue reading “What’s new on electrostatically defined quantum dots in bilayer graphene at ETH Zürich: a seminar by Dr. Annika Kurzmann”The Aachen Graphene & 2D Materials Center celebrates two IEEE Distinguished Lectures and a kickoff meeting on November 26th
November 26th will be an eventful day at the Aachen Graphene & 2D Materials Center, featuring two IEEE Distinguished Lectures and the kickoff meeting of the ULTIMOS2 project.
Continue reading “The Aachen Graphene & 2D Materials Center celebrates two IEEE Distinguished Lectures and a kickoff meeting on November 26th”An intensive two-day workshop on 2D materials at Forum M
Experts from all over Europe gathered in Aachen to discuss the challenges of wafer-scale integration of 2D materials, in a workshop organized by AMO and the Aachen Graphene & 2D Materials Center.
Continue reading “An intensive two-day workshop on 2D materials at Forum M”