First observation of coherent charge dynamics in graphene quantum dots

In a recent study published in Nature Communications, researchers from RWTH Aachen University and Forschungszentrum Jülich have reported the observation of coherent charge oscillations in bilayer graphene quantum dots. This marks a significant milestone on the way to spin and valley qubits in a two-dimensional material system.

Katrin Hecker (right), Christian Volk (left) and colleagues from RWTH Aachen University have realized the first “charge qubit” in bilayer graphene, marking a significant milestone on the way to spin and valley qubits in a two-dimensional material system. (Photo: Hubert Dulisch/RWTH Aachen University)
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High quality hexagonal Boron Nitride – made in Aachen

Good news for the community working on two-dimensional materials in Europe: a team of researchers at RWTH Aachen University has successfully implemented the process for growing high-quality hexagonal Boron Nitride at atmospheric pressure and high temperature, increasing the resilience of the supply chain of this unique material.

Hexagonal Boron Nitride grown in Aachen: the growth process results in a continuous crystal-layer with crystal grains of the order of a few 100 µm.
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A scalable pathway for the mechanical transfer of graphene grown by CVD 

Nowadays it is possible to grow high-quality graphene on large scale using chemical vapor deposition (CVD). What remains a major bottleneck for the industrialization of the material is the transfer of graphene from the growth substrate to a target one. A team of researchers from the University of Cambridge and RWTH Aachen University has now developed a methodology for optimizing simultaneously the growth and the transfer process, showing that it is possible to dry-transfer graphene with high-yield, if the crystallographic orientation of the growth surface is chosen appropriately.

Optical micrograph of star-shaped graphene flakes grown by CVD on copper.
(© Stampfer Lab, RWTH Aachen University) 
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How to report and benchmark emerging field-effect transistors

One of the challenges encountered by research on novel electronic devices is to compare devices based on different materials in a consistent way. RWTH Professor Max Lemme and colleagues from USA, China, and Belgium have now proposed a set of clear guidelines for benchmarking key parameters and performance metrics of emergent field-effect transistors. The guidelines have been published as a Perspective Article in Nature Electronics.

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