Healing Achilles heel of two-dimensional transistors

Stability – in the sense of stable operation thorough lifetime – is one of the key characteristics that an electronic device need to present to be suitable for applications. And it is the Achilles heel of transistors based on two-dimensional materials, which typically show much worse stability than devices based on silicon. A team of researchers from TU Wien, AMO GmbH, RWTH Aachen University and Wuppertal University has now demonstrated a novel engineering approach to enhance the electrical stability of two-dimensional transistors by carefully tuning the Fermi energy. The results have been reported in Nature Electronics.

Continue reading “Healing Achilles heel of two-dimensional transistors”

Perspective article in Science by Markus Morgenstern and Mark Goerbig.

Following the recent progresses made by the Yazdani group in visualizing broken symmetries and topological states caused by the interaction between electrons in graphene under high magnetic field [1], Markus Morgenstern and Mark Goerbig have released Perspective article in Science [2], where they review in a very accessible language the basic physics beyond the observed effects.

[1] Visualizing broken symmetry and topological defects in a quantum Hall ferromagnet
X. Liu, G. Farahi, C.-L.Chiu, Z. Papic, K. Watanabe, T. Taniguchi, M. P. Zaletel, and A. Yazdani
Science 375, 321 (2021).  DOI: 10.1126/science.abm3770

[2] Many-particle electron states in graphene
M. Morgenstern and M. Goerbig
Science 375, 263 (2022).  DOI: 10.1126/science.abn2049

Progress towards flexible, low-power transceivers based on MoS2

Scientists from RWTH Aachen University, AMO GmbH, EPFL and Aixtron SE have demonstrated the first power detectors based on Molybdenum  disulphide (MoS2) that operate at zero bias. The fabricated  circuits function in Ku-band  between  12  and  18GHz, and are the best-performing  power  detectors  fabricated  on  flexible  substrate  reported  to  date. Their dynamic range exceeds 30dB, outperforming   other semiconductor   technologies, like silicon complementary metal oxide semiconductor (CMOS) circuits and GaAs Schottky diodes.

Continue reading “Progress towards flexible, low-power transceivers based on MoS2”