How to report and benchmark emerging field-effect transistors

One of the challenges encountered by research on novel electronic devices is to compare devices based on different materials in a consistent way. RWTH Professor Max Lemme and colleagues from USA, China, and Belgium have now proposed a set of clear guidelines for benchmarking key parameters and performance metrics of emergent field-effect transistors. The guidelines have been published as a Perspective Article in Nature Electronics.

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New perspectives on Layer Transfer and Artificial Crystalline Heterostructures at IKZ – A talk by Dr. Jens Martin

Dr. Jens Martin, from the Leibniz-Insitut für Kristallforschung (IKZ) in Berlin, has been the speaker of the 30th Aachen Graphene Center Seminar. Dr. Martin is the head of the section Semiconductor Nanostructures at IKZ, and one of the coordinators of the IKZ-IRIS Joint Lab “Layer Transfer for 2D-Heterostructures“.  In his talk, presented the recent advances of his group on the growth, release and transfer of thin epitaxial perovskite films, as well in on the in-situ growth of 2D-vdW multilayers and heterostructures.

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A major event on graphene in Aachen

AMO GmbH is one of the organizer of Graphene 2022, Europe’s largest conference on graphene and 2D materials, which is taking place in Aachen from July 5 to 8, 2022. More than 500 scientist have gathered at the Eurogress for four intensive days of scientific discussions. The conference program features 76 speakers – including the 2010 Nobel Prize laureate in physics, Professor Andre Geim, and Professor Pablo Jarillo-Herrero from MIT – as well as six workshops, an industrial forum and 33 exhibitors from across the globe.  

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Healing Achilles heel of two-dimensional transistors

Stability – in the sense of stable operation thorough lifetime – is one of the key characteristics that an electronic device need to present to be suitable for applications. And it is the Achilles heel of transistors based on two-dimensional materials, which typically show much worse stability than devices based on silicon. A team of researchers from TU Wien, AMO GmbH, RWTH Aachen University and Wuppertal University has now demonstrated a novel engineering approach to enhance the electrical stability of two-dimensional transistors by carefully tuning the Fermi energy. The results have been reported in Nature Electronics.

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