The Chair for Electronic Devices (ELD) at RWTH Aachen University is going to embark on a joint research project with the group of Prof. Alexei N. Nazarov at the Lashkaryov Institute of Semiconductor Physics (ISP) in Kyiv.
This initiative, funded by the German Federal Ministry of Research and Education (BMBF), is part of a broader effort launched in March 2023 to bolster Ukraine’s scientific community amid ongoing challenges. With a commitment of €24 million until 2028, the BMBF-Initiative Wiederaufbau Ukraine aims to stabilize and strengthen Ukraine’s research landscape through enhanced German-Ukrainian collaboration.
The project proposed by ELD and ISP focuses on developing MOSFETs utilizing two-dimensional Molybdenum Disulfide (2D-MoS2), characterizing in particular on the effect of the dielectric materials on key electrical properties, such as charge-carrier mobility, threshold voltage, and leakage current. Device fabrication will take place at ELD, while the group at ISP, NAS will perform in-depth characterization of the gate dielectrics, defects, and charge carrier dynamics. The grant will also fund research stays of Ukrainian scientists in Germany.
The potential of 2D semiconductors like MoS2 is significant; they promise to reduce energy consumption in computing, lower manufacturing energy requirements, and minimize raw material usage The project thus contributes to the further development of advanced technologies and strengthens the capabilities of the European chip industry, in line with the European Chip Act.